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APT27GA90K
900V High Speed PT IGBT
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
(R)
TO-220
APT27GA90K
Single die IGBT
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current Gate-Emitter Voltage
2 1
Ratings
900 48 27 79 30 223 79A @ 900V -55 to 150 300
Unit
V
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 14A VCE = 900V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
900
Typ
2.5 2.2 4.5
Max
3.1 6 250 1000 100
Unit
V
VGE =VCE , IC = 1mA
A nA
052-6331 Rev C 6 - 2009
VGS = 30V
Thermal and Mechanical Characteristics
Symbol
RJC WT Torque
Characteristic
Junction to Case Thermal Resistance Package Weight Mounting Torque (TO-220 Package), 4-40 or M3 screw
Min
-
Typ
1.9
Max
0.56 10
Unit
C/W g in*lbf
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg3 Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff6 td(on tr td(off) tf Eon2 Eoff6
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 450V IC = 14A TJ = 150C, RG = 104, VGE = 15V, L= 100uH, VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V IC = 14A RG = 104 TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V IC = 14A RG = 104 TJ = +125C 79 9 8 98 84 413 287 8 10 137 144 760 647
APT27GA90K
Min Typ
1390 145 30 62 8 24 A nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy
Max
Unit
ns
J
ns
J
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6331 Rev C 6 - 2009
Typical Performance Curves
50
V
GE
APT27GA90K
250 225 IC, COLLECTOR CURRENT (A) 200 175 150 125 100 75 50 25 0 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 14A C T = 25C
J
= 15V
15V 13V
IC, COLLECTOR CURRENT (A)
40
TJ= 55C
30
TJ= 25C TJ= 150C
11V 10V 9V 8V 7V 6V
20 TJ= 125C 10
0
100
0 1 2 3 4 5 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
16 14 12 10 8 6 4 2 0
IC, COLLECTOR CURRENT (A)
80
VCE = 180V VCE = 450V VCE = 720V
60
40 TJ= 125C 20 TJ= 25C
TJ= -55C 4 6 8 10 12 14 16
0
0
2
0
20
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5 4 3 2 1 0 IC = 7A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
5
40 60 GATE CHARGE (nC) FIGURE 4, Gate charge
80
4 IC = 28A IC = 14A 2 IC = 7A 1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
3
IC = 28A IC = 14A
6
8
10
12
14
16
0
0
25
50
75
100
125
150
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.15
TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 50
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70
IC, DC COLLECTOR CURRENT (A)
40
30
10
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
0
25
50
052-6331 Rev C 6 - 2009
20
Typical Performance Curves
16 td(ON), TURN-ON DELAY TIME (ns) 14 12 10 8 6 4 2 0 5 10 15 20 25 30 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 30 25 20 tr, FALL TIME (ns) 15 10 5 0
TJ = 25 or 125C,VGE = 15V RG = 10, L = 100H, VCE = 600V
APT27GA90K
200 td(OFF), TURN-OFF DELAY TIME (ns) 175 150 125 100 75 50 25 0
VCE = 600V RG = 10 L = 100H VGE =15V,TJ=25C VGE =15V,TJ=125C
VCE = 600V TJ = 25C, or 125C RG = 10 L = 100H
0
0 5 10 15 20 25 30 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200 180 160
tr, RISE TIME (ns)
140 120 100 80 60 40 20 0 5 10 15 20 25 30 0
RG = 10, L = 100H, VCE = 600V TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 2000 Eon2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J)
V = 600V CE V = +15V GE R =10
G
0 5 10 15 20 25 30 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
1600 1400 1200 1000 800 600 400 200 0
V = 600V CE V = +15V GE R = 10
G
1600
1200
TJ = 125C
TJ = 125C
800
400
TJ = 25C
TJ = 25C
0 5 10 15 20 25 30 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 2500 SWITCHING ENERGY LOSSES (J) SWITCHING ENERGY LOSSES (J)
V = 600V CE V = +15V GE T = 125C
J
0
0 5 10 15 20 25 30 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 2000
V = 600V CE V = +15V GE R = 10
G
Eon2,28A Eoff,28A
2000
Eon2,28A
1500
1500
Eoff,28A
1000
Eon2,14A
052-6331 Rev C 6 - 2009
1000
Eon2,14A Eoff,14A Eon2,7A Eoff,7A
500
500
Eoff,14A Eon2,7A Eoff,7A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
Typical Performance Curves
10,000 1000
APT27GA90K
C, CAPACITANCE (pF)
Cies 1,000
IC, COLLECTOR CURRENT (A)
100
10
100
Coes Cres
1
0 200 400 600 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
10
1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0. 6 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 0. 5 0. 4 0. 3 0. 2 0. 1 0 0.7
0.5
Note:
PDM
0.3
t1 t2
0.1 0.05 10
-5
SINGLE PULSE 10
-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3
10-2
0.1
1
RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
052-6331 Rev C 6 - 2009
APT27GA90K
10% Gate Voltage td(on) 90% TJ = 125C
APT15DQ100
tr
V CC IC V CE
Collector Current
5%
10%
5%
Collector Voltage
Switching Energy
A D.U.T.
Figure 20, Inductive Switching Test Circuit
Figure 21, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C
Gate Voltage
Collector Voltage tf 10%
0
Collector Current
Switching Energy
Figure 22, Turn-off Switching Waveforms and Definitions
TO-220 (K) Package Outline
2.80 (.110) 2.60 (.102) 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 7.10 (.280) 6.70 (.263)
12.192 (.480) 9.912 (.390)
3.70 (.145) 2.20 (.126)
3.40 (.133) Dia. 3.10 (.123)
3.683 (.145) MAX.
0.48 (.019) 0.44 (.017) 2.85 (.112) 2.65 (.104) 4.80 (.189) 4.60 (.181)
14.73 (.580) 12.70 (.500)
Gate Drain Collector Source Emitter
1.01 (.040) 3-Plcs. .83 (.033) 2.79 (.110) 2.29 (.090) 5.33 (.210) 4.83 (.190)
1.77 (.070) 3-Plcs. 1.15 (.045)
052-6331 Rev C 6 - 2009
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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